Performance Analysis of High-K Dielectric Heterojunction High Electron Mobility Transistor for RF Applications

Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications

Metamorphic buffers ~M-buffers! consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors ~M-HEMTs!, while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology an...

Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter.

Single layer graphene is an ideal material for the base layer of hot electron transistors (HETs) for potential terahertz (THz) applications. The ultrathin body and exceptionally long mean free path maximizes the probability for ballistic transport across the base of the HET. We demonstrate for the first time the operation of a high-performance HET using a graphene/WSe2 van der Waals (vdW) heter...

Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.

We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements a...

MOCVD growth of GaN-based high electron mobility transistor structures

Hydrogen sensing properties of a metamorphic high electron mobility transistor

transistor Tsung-Han Tsai, Huey-Ing Chen, Chung-Fu Chang, Po-Shun Chiu, Yi-Chun Liu, Li-Yang Chen, Tzu-Pin Chen, and Wen-Chau Liu Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China Department of Chemical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101...